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RZR020P01
Electrical characteristics (Ta=25 ° C)
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 10V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 12
?
?
V
I D = ? 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
I DSS
V GS (th)
?
? 0.3
?
?
?
75
? 1
? 1.0
105
μ A
V
m ?
V DS = ? 12V, V GS =0V
V DS = ? 6V, I D = ? 1mA
I D = ? 2A, V GS = ? 4.5V
Static drain-source on-state
resistance
R DS (on)
?
?
?
105
150
145
225
m ?
m ?
I D = ? 1A, V GS = ? 2.5V
I D = ? 1A, V GS = ? 1.8V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r ?
t d (off) ?
t f ?
Q g ?
Q gs ?
Q gd ?
?
2
?
?
?
?
?
?
?
?
?
?
200
?
770
75
60
10
17
65
35
6.5
1.3
0.8
400
?
?
?
?
?
?
?
?
?
?
?
m ?
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I D = ? 0.4A, V GS = ? 1.5V
V DS = ? 6V, I D = ? 2A
V DS = ? 6V
V GS =0V
f=1MHz
V DD ? 6V
I D = ? 1A
V GS = ? 4.5V
R L 6 ?
R G =10 ?
V DD ? 6V, I D = ? 2A
V GS = ? 4.5V
R L 3 ? , R G =10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
? 1.2
Unit
V
Conditions
I S = ? 2A, V GS =0V
? Pulsed
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2/4
2009.03 - Rev.A
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